SSD : 2.5'' : 250GB : SATA3 : 850 EVO : MZ-75E250E : Samsung
SSD 850 EVO 2.5" SATA III
Samsung's 850 EVO series SSD is the industry's #1 best-selling SSD and is perfect for everyday computing. Powered by Samsung's V-NAND technology, the 850 EVO transforms the everyday computing experience with optimized performance and endurance. Designed to fit desktop PCs, laptops, and ultrabooks, the 850 EVO comes in a wide range of capacities and form factors.
The 850 EVO optimizes performance for your daily computing tasks, boasting sequential write speeds up to 520 MB/s with TurboWrite technology and sequential read speeds up to 540 MB/s. Plus, RAPID mode to further boost performance for up to 2x faster data processing speeds by utilizing unused PC memory as cache storage.
Capacities Range up to 4TB
More storage options that are just right for your needs. Samsung offers the 850 EVO in a full range of capacities up to 4TB. With the industry’s first 4TB SSD for client PCs, you can store more data on a single SSD than ever before.
Multiple Form Factors for Almost Any Need
Samsung has designed the 850 EVO in multiple form factors with compatibility in mind. The 2.5-inch size is designed to fit most desktop PCs and laptops, while the SATA-based M.2 and mSATA are ideal for ultra-slim mobile computing.
|Interface||SATA 6Gb/s Interface, compatible with SATA 3Gb/s & SATA 1.5Gb/s interface|
|Capacity||250 GB* Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)|
|Sequential Read Speed||Up to 540 MB/s Sequential Read * Performance may vary based on system hardware & configuration|
|Sequential Write Speed||Up to 520 MB/s Sequential Write * Performance may vary based on system hardware & configuration|
|Random Read Speed||Random Read (4KB, QD32):Up to 97,000 IOPS Random Read * Performance may vary based on system hardware & configuration Random Read (4KB, QD1):Up to 10,000 IOPS Random Read* Performance may vary based on system hardware & configuration|
|Random Write Speed||Random Write (4KB, QD32):Up to 88,000 IOPS Random Write * Performance may vary based on system hardware & configurationRandom Write (4KB, QD1):Up to 40,000 IOPS Random Write * Performance may vary based on system hardware & configuration|
|Memory Speed||Samsung 32 layer 3D V-NANDSamsung 512 MB Low Power DDR3 SDRAM|
|Controller||Samsung MGX Controller|
|AES Encryption||AES 256 bit Encryption (Class 0) , TCG/Opal, IEEE1667 (Encrypted drive)|
|Power Consumption (W)||50 MW * Actual power consumption may vary depending on system hardware & configuration*Average: 2.4 W *Maximum: 2.4 W (Burst mode) * Actual power consumption may vary depending on system hardware & configuration|
|Voltage||5V ± 5% Allowable voltage|
|Reliability (MTBF)||2 Million Hours Reliability (MTBF)|
|Form Factor||2.5" SATA III|
|Dimensions (W x D x H)||3.94" x 2.75" x 0.27|